Detail specification for silicon variable capacitance diodes
€269.00
Detail specifications for silicon voltage-regulator diodes
€165.00
Detail specification for silicon fast switching, double ended diodes
Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: general purpose signal diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: switching diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality. Voltage reference diodes
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Rules for the preparation of detail specifications for semiconductor devices of assessed quality: voltage regulator diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low current rectifier diodes (up to 3 ampere rating)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: medium current rectifier diodes (1-100 ampere rating)
Detail specification for medium current rectifier diodes. 3 A, 300 V, 600 V, 900 V, 1200 V, hermetically sealed. Full assessment level
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: high current rectifier diodes (greater than 50 ampere rating)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: controlled avalanche rectifier diodes
General principles of measuring methods; current regulator diodes
€34.30
Semiconductor devices; measuring methods for threshold voltage and resistance of Gunn diodes; identical with IEC 47(Central Office)1191
