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24/30497109 DC:2024
BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 5. Test method using X-ray topography
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Technical characteristics
| Publisher | British Standards Institution (BSI) |
| Publication Date | 07/12/2024 |
| Page Count | 32 |
| Themes | X-rays |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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