BS IEC 60747-9:2019
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BS IEC 60747-9:2019

Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)

Summary

Electronic equipment and components;Rated power;Rated voltage;Rated current;Electric current;Bipolar transistors;Symbols;Current measurement;Integrated circuits;Electrical safety;Transistors;Response time;Thermal resistance;Ratings;Circuits;Voltage measurement;Dissipation factor;Electrical resistance;Voltage;Capacitance;Graphic symbols;Semiconductor devices;Temperature;Time;Electrical measurement;Leakage currents;Electrical insulation;Electrical properties and phenomena;Testing conditions

Technical characteristics

Publisher British Standards Institution (BSI)
Publication Date 11/22/2019
Page Count 82
Themes Testing conditions
EAN ---
ISBN ---
Weight (in grams) ---

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Previous versions

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