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BS IEC 63601:2026
Guideline for evaluating bias temperature instability of silicon carbide metal-oxide-semiconductor devices for power electronic conversion
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Technical characteristics
| Publisher | British Standards Institution (BSI) |
| Publication Date | 02/10/2026 |
| Page Count | 50 |
| Themes | Metal oxide semiconductors |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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