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DIN EN 60749-44:2017-04
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
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Summary
This part of IEC 60749 establishes a procedure for measuring the single event effects on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to terrestrial cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
Technical characteristics
| Publisher | Deutsche Institut für Normung e.V. (DIN) |
| Publication Date | 04/01/2017 |
| Page Count | 22 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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