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DIN EN 62880-1:2014-08
Semiconductor devices - Wafer level reliability for semiconductor devices - Part 1: Copper stress migration test method (IEC 47/2191/CD:2014)
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Summary
This Standard describes a method of stress migration (Stress induced voiding) test for Copper metallization and product lifetime estimation method of Stress Migration failure. This standard is applicable for reliability investigation and qualification of semiconductor process.
Technical characteristics
| Publisher | Deutsche Institut für Normung e.V. (DIN) |
| Publication Date | 08/01/2014 |
| Cancellation Date | 08/01/2018 |
| Page Count | 64 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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