Superseded
Draft standard
Historical
DIN IEC 47(Sec)1282:1993-06
Semiconductor devices; ratings and characteristics and measuring methods for insulated gate bipolar transistors (IGBTs); identical with IEC 47(Secretariat)1282:1992
Preview
Summary
Halbleiterbauelemente; Grenz- und Kennwerte und Meßverfahren für Bipolartransistoren mit isoliertem Gate (IGBTs); Identisch mit IEC 47(Sec)1282:1992
Technical characteristics
| Publisher | Deutsche Institut für Normung e.V. (DIN) |
| Publication Date | 06/01/1993 |
| Page Count | 8 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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