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DIN IEC 47E/114/CDV:1998-10
Amendment 1 to IEC 60747-9: Insulated gate bipolar transistors (IGBTs) (IEC 47E/114/CDV:1998)
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Summary
Änderung 1 zu IEC 60747-9: Bipolartransistoren mit isoliertem Gate (IGBTs) (IEC 47E/114/CDV:1998)
Technical characteristics
| Publisher | Deutsche Institut für Normung e.V. (DIN) |
| Publication Date | 10/01/1998 |
| Page Count | 8 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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01/10/1998
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