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IEC 60747-9:2019
IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
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Summary
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
* reverse-blocking IGBT and its related technical contents have been added;
* reverse-conducting IGBT and its related technical contents have been added;
* some parts of the previous edition have been amended, combined or deleted.
This third edition includes the following significant technical changes with respect to the previous edition:
* reverse-blocking IGBT and its related technical contents have been added;
* reverse-conducting IGBT and its related technical contents have been added;
* some parts of the previous edition have been amended, combined or deleted.
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 11/13/2019 |
| Edition | 3.0 |
| Page Count | 160 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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Previous versions