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IEC 62047-16:2015

IEC 62047-16:2015 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

Summary

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Technical characteristics

Publisher International Electrotechnical Commission (IEC)
Publication Date 03/05/2015
Edition 1.0
Page Count 21
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