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IEC 62373-1:2020
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
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Summary
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
This document also defines the terms pertaining to the conventional BTI test method.
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 07/15/2020 |
| Edition | 1.0 |
| Page Count | 44 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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