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IEC 63011-3:2018
IEC 63011-3:2018 Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via
Summary
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 11/28/2018 |
| Edition | 1.0 |
| Page Count | 28 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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