IEC 63068-3:2020
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IEC 63068-3:2020

IEC 63068-3:2020 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Summary

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Technical characteristics

Publisher International Electrotechnical Commission (IEC)
Publication Date 07/13/2020
Edition 1.0
Page Count 51
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ISBN ---
Weight (in grams) ---
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