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IEC 63275-1:2022
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
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Summary
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 04/21/2022 |
| Edition | 1.0 |
| Page Count | 25 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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