Active
Standard
Most Recent
IEC 63275-2:2022
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
Preview
Summary
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 05/11/2022 |
| Edition | 1.0 |
| Page Count | 20 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
No products.