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IEC 63284:2022
IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
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Summary
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Technical characteristics
| Publisher | International Electrotechnical Commission (IEC) |
| Publication Date | 04/21/2022 |
| Edition | 1.0 |
| Page Count | 25 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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