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ISO 12406:2010 (R2021)
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
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Summary
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
Notes
90.93 : Norme internationale confirmée
Technical characteristics
| Publisher | International Organization for Standardization (ISO) |
| Publication Date | 11/08/2010 |
| Confirmation Date | 10/05/2021 |
| Edition | 1 |
| Page Count | 13 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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08/11/2010
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