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ISO 17560:2014 (R2025)
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
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Summary
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
Notes
90.93 : Norme internationale confirmée
Technical characteristics
| Publisher | International Organization for Standardization (ISO) |
| Publication Date | 09/10/2014 |
| Confirmation Date | 08/04/2025 |
| Edition | 2 |
| Page Count | 10 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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10/09/2014
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