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ISO 23812:2009 (R2025)
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
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Summary
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Notes
90.93 : Norme internationale confirmée
Technical characteristics
| Publisher | International Organization for Standardization (ISO) |
| Publication Date | 04/08/2009 |
| Confirmation Date | 08/04/2025 |
| Edition | 1 |
| Page Count | 19 |
| EAN | --- |
| ISBN | --- |
| Weight (in grams) | --- |
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08/04/2009
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