Detail specification for silicon voltage regulator diodes
€316.00
Detail specification for mixer diodes for use at X-band frequencies
€193.00
Detail specification for coaxial mixer diodes
€165.00
Detail specification for germanium coaxial mixer diodes
Detail specification for a matched pair of germanium coaxial mixer diodes
€269.00
Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q
Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q
Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q
Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C
Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: variable capacitance diodes for tuning applications
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (pulse operation)
