Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave detector diodes
€165.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave passive limiter diodes
€269.00
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave active switching diodes
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave Gunn oscillators (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave avalanche oscillators (c.w. operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave avalanche oscillators (pulse operation)
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: varactor diodes for frequency multiplication
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low noise, low power microwave transistors
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave semiconductor switches (without integrated driver circuits)
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
