29.045 : Semiconducting materials

ASTM F1451-92(1999)

ASTM F1451-92(1999)

Withdrawn Most Recent

Standard Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003)

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ASTM F1526-95(2000)

ASTM F1526-95(2000)

Withdrawn Most Recent

Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy (Withdrawn 2003)

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ASTM F1528-94(1999)

ASTM F1528-94(1999)

Withdrawn Most Recent

Standard Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry (Withdrawn 2003)

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ASTM F1529-97

ASTM F1529-97

Withdrawn Most Recent

Standard Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure (Withdrawn 2003)

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ASTM F1535-00

ASTM F1535-00

Withdrawn Most Recent

Standard Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance (Withdrawn 2003)

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ASTM F1569-94(1999)

ASTM F1569-94(1999)

Withdrawn Most Recent

Standard Guide for Generation of Consensus Reference Materials for Semiconductor Technology (Withdrawn 2003)

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ASTM F1619-95(2000)e1 (R1995)

ASTM F1619-95(2000)e1 (R1995)

Withdrawn Most Recent

Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003)

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ASTM F1620-96

ASTM F1620-96

Withdrawn Most Recent

Standard Practice for Calibrating a Scanning Surface Inspection System Using Monodisperse Polystyrene Latex Spheres Deposited on Polished or Epitaxial Wafer Surfaces (Withdrawn 2003)

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ASTM F1621-96

ASTM F1621-96

Withdrawn Most Recent

Standard Practice for Determining the Positional Accuracy Capabilities of a Scanning Surface Inspection System (Withdrawn 2003)

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ASTM F1630-00

ASTM F1630-00

Withdrawn Most Recent

Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)

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ASTM F388-84

ASTM F388-84

Withdrawn Most Recent

Method for Measurement of Oxide Thickness on Silicon Wafers and Metallization Thickness by Multiple-Beam Interference (Tolansky Method) (Withdrawn 1993)

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ASTM F1724-01

ASTM F1724-01

Withdrawn Most Recent

Standard Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy (Withdrawn 2003)

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ASTM F1982-99e1

ASTM F1982-99e1

Withdrawn Most Recent

Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography (Withdrawn 2003)

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ASTM F2074-00

ASTM F2074-00

Withdrawn Most Recent

Standard Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers (Withdrawn 2003)

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BS IEC 62899-503-3:2021

BS IEC 62899-503-3:2021

Active Most Recent

Printed electronics Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length

€193.00

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