Detail specifications for silicon power rectifier diodes
€269.00
Detail specification for silicon variable capacitance diodes
Detail specifications for silicon voltage-regulator diodes
€165.00
Detail specification for silicon n-p-n high frequency transistor
Detail specification for silicon stud mounted, reverse blocking triode thyristors
Detail specification for silicon fast switching, double ended diodes
Detail specification for silicon n-p-n medium power transistors
Detail specification for six terminal device, containing two isolated high gain n-p-n silicon planar transistors
Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
Detail specification for silicon n-p-n high frequency planar transistor
Detail specification for silicon n-p-n planar epitaxial transistors
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: general purpose signal diodes
