Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C-C-hydrocarbons in gaseous hydrogen chloride by gaschromatography
€41.78
Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 8: Determination of 33 elements in high-purity sulfuric acid by ICP-MS
€56.17
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
€69.91
Thermostat metals; technical delivery conditions
€48.79
Thermostat metals; testing the specific thermal curvature
€34.30
Test Method for Crystallographic Perfection of Epitaxial Deposits of Silicon by Etching Techniques (Withdrawn 1998)
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Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers (Withdrawn 1998)
Test Method for Stacking Fault Density of Epitaxial Layers of Silicon by Interference-Contrast Microscopy (Withdrawn 1998)
Practice for Identification of Minute Crystalline Particle Contaminants by X-Ray Diffraction (Withdrawn 1994)
Method for Preparing Monocrystalline Test Ingots of Silicon by the Vertical-Pulling (Czochralski) Technique (Withdrawn 1988)
Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1990)
