Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
€48.79
Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semiconductor slices using a capacitive probe
€41.78
Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method
Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
€34.30
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of water traces in gaseous hydrogen chloride by a diphosphorus pentoxide cell
Testing of materials for semiconductor technology; contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
Testing of materials for semiconductor technology; measurement of carrier lifetime in silicon single crystals; recombination carrier lifetime at low injection by photo conductive decay method
Testing of materials for semiconductor technology; recognition of defects and inhomogeneities in semiconductor single crystals by X-ray topography; III-V-semiconductor compounds
Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen
€56.17
Testing of materials for use in semiconductor technology; determination of interstitial atomic boron and phosphorus content of silicon by infrared absorption spectroscopy
Testing of materials for semiconductor technology; conversion between resistivity and dopant density; silicon
€77.20
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
