29.045 : Semiconducting materials

DIN 50455-1:2008-04

DIN 50455-1:2008-04

Superseded Historical

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods

€41.78

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DIN 50452-2:2008-04

DIN 50452-2:2008-04

Superseded Historical

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters

€56.17

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DIN 50451-5:2008-09

DIN 50451-5:2008-09

Superseded Historical

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram

€48.79

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DIN 50441-5:2001-04

DIN 50441-5:2001-04

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation

€56.17

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DIN 50453-3:2001-04

DIN 50453-3:2001-04

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium, gravimetric method

€34.30

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DIN 50438-3:1999-08

DIN 50438-3:1999-08

Superseded Historical

Testing of materials for use in semiconductor technology - Determination of impurity content of silicon by infrared absorption - Part 3: Boron and phosphorus

€56.17

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DIN 50454-1:2000-07

DIN 50454-1:2000-07

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

€56.17

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DIN 50438-3:2000-12

DIN 50438-3:2000-12

Withdrawn Most Recent

Testing of materials for use in semiconductor technology - Determination of impurity content silicon by infrared absorption - Part 3: Boron and phosphorus

€56.17

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DIN 50457-2:1999-11

DIN 50457-2:1999-11

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods - Part 2: Phosphine in nitrogen phosphine mixtures

€34.30

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DIN 50457-1:1999-11

DIN 50457-1:1999-11

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods - Part 1: Diborane in hydrogen diborane mixtures

€34.30

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DIN 50441-4:1999-03

DIN 50441-4:1999-03

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth

€48.79

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DIN 50453-3:1999-01

DIN 50453-3:1999-01

Superseded Historical

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium; gravimetric method

€34.30

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DIN 50454-1:1999-07

DIN 50454-1:1999-07

Superseded Historical

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

€63.27

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DIN 50451-1:2002-01

DIN 50451-1:2002-01

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of metals in liquids - Part 1: Silver (Ag), Gold (Au), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS

€41.78

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DIN 50451-2:2002-01

DIN 50451-2:2002-01

Superseded Historical

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2: Calcium (Ca), Cobolt (Co), chromium (Cr), copper (Cu), iron (Fe), nickel (Ni) and zinc (Zn) in hydrofluoric acid with plasma-induced emission spectroscopy

€41.78

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