29.045 : Semiconducting materials

DIN 50441-4:1987-07

DIN 50441-4:1987-07

Superseded Historical

Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; diameter and flat depth of slices

€34.30

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DIN 50451-1:1987-10

DIN 50451-1:1987-10

Superseded Historical

Testing of materials for semiconductor technology; determination of traces of metals in liquids; Ag, Au and Cu in nitric acid by means of AAS

€34.30

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DIN 50431:1988-05

DIN 50431:1988-05

Withdrawn Most Recent

Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array

€41.78

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DIN 50435:1988-05

DIN 50435:1988-05

Withdrawn Most Recent

Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method

€34.30

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DIN 50443-1:1988-07

DIN 50443-1:1988-07

Withdrawn Most Recent

Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography

€56.17

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DIN 50452-1:1988-09

DIN 50452-1:1988-09

Superseded Historical

Testing of materials for semiconductor technology; test method for particle analysis in liquids; microscopic determination of particles

€34.30

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DIN 50441-4:1997-11

DIN 50441-4:1997-11

Superseded Historical

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diameter variation, flat diameter, flat length, flat depth

€48.79

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DIN 50448:1998-01

DIN 50448:1998-01

Withdrawn Most Recent

Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe

€34.30

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DIN 50449-2:1998-01

DIN 50449-2:1998-01

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide

€34.30

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DIN 50457-1:1998-01

DIN 50457-1:1998-01

Superseded Historical

Testing of materials for semiconductor technology - Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods - Part 1: Diborane in hydrogen diborane mixtures

€34.30

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DIN 50457-2:1998-01

DIN 50457-2:1998-01

Superseded Historical

Testing of materials for semiconductor technology - Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods - Part 2: Phosphine in nitrogen phosphine mixtures

€34.30

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DIN 50456-3:1998-03

DIN 50456-3:1998-03

Superseded Historical

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities

€34.30

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DIN 50441-5:1998-05

DIN 50441-5:1998-05

Superseded Historical

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation

€56.17

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DIN 50455-2:1998-07

DIN 50455-2:1998-07

Superseded Historical

Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 2: Determination of photosensitivity of positive photoresists

€34.30

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DIN 50451-4:2005-05

DIN 50451-4:2005-05

Superseded Historical

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

€56.17

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