29.045 : Semiconducting materials

ASTM F123-91

ASTM F123-91

Withdrawn Most Recent

Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 1992)

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ASTM F612-88

ASTM F612-88

Withdrawn Most Recent

Practice for Cleaning Surfaces of Polished Silicon Slices (Withdrawn 1993)

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ASTM F775-88

ASTM F775-88

Withdrawn Most Recent

Test Method for Wafer and Slice Flatness by Interferometric (Withdrawn 1991)

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ASTM F848-83(1988)

ASTM F848-83(1988)

Withdrawn Most Recent

Method for Determining the Lattice Constant of Single Crystal Gadolinium Gallium Garnet (Withdrawn 1992)

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ASTM F849-83(1988)

ASTM F849-83(1988)

Withdrawn Most Recent

Method for Identification and Test of Structures and Contaminants Seen on Polished Gadolinium Gallium Surfaces (Withdrawn 1992)

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ASTM F850-83(1988)

ASTM F850-83(1988)

Withdrawn Most Recent

Test Method for Crystallographic Perfection of Gadolinium Gallium Garnet by Preferential Etch Techniques (Withdrawn 1992)

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ASTM F1189-88

ASTM F1189-88

Withdrawn Most Recent

Test Method for Using Computer-Assisted Infrared Spectrophotometry to Measure the Interstitial Oxygen Content of Silicon Slices Polished on Both Sides (Withdrawn 1993)

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DIN 50451-3:1994-10

DIN 50451-3:1994-10

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of metals in liquids - Part 3: Al, Co, Cu, Na, Ni and Zn in nitric acid with ICP-MS

€34.30

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DIN 50454-2:1994-10

DIN 50454-2:1994-10

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide

€34.30

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DIN 50454-3:1994-10

DIN 50454-3:1994-10

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide

€34.30

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DIN 50441-1:1994-12

DIN 50441-1:1994-12

Superseded Historical

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation

€34.30

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DIN 50456-2:1995-04

DIN 50456-2:1995-04

Withdrawn Most Recent

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 2: Determination of ionic impurities using pressure cooker test

€34.30

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DIN 50447:1995-04

DIN 50447:1995-04

Withdrawn Most Recent

Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method

€34.30

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DIN 50438-1:1995-07

DIN 50438-1:1995-07

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen

€56.17

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DIN 50446:1995-09

DIN 50446:1995-09

Withdrawn Most Recent

Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers

€56.17

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