Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Aluminium (Al), cobalt (Co), copper (Cu), sodium (Na), nickel (Ni), and zinc (Zn) in nitric acid with ICP-MS
€41.78
Testing of materials for semiconductor technology; measurement of recombination carrier lifetime in silicon single crystals by means of photo conductive decay method; measurement on bar-shaped specimens
Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; testing of edge rounding
€34.30
Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
€48.79
Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
€24.39
Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction
Testing of semi-conducting inorganic materials - Measurement of the metalurgic thickness of epitaxial layers of silicon by the stacking fault method
Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method
Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
Testing of materials for semiconductor technology; determination of the dislocations etch pits density in monocrystals of III-V-compound semiconductors; galliumarsenide
Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
