Semiconductor devices; revision of the definition for forward direction and reverse direction; identical with IEC 47(Central Office)1120
€34.30
Semiconductor devices; cut-off-frequency, terms and definitions; identical with IEC 47(Central Office)1121
Semiconductor devices; revision of IEC 60747-1, chapter IV, 2.16 layers; identical with IEC 47(Central Office)1122
Semiconductor devices; IMPATT-diodes, -diode amplifiers and -diode oscillators, terms and letter symbols; identical with IEC 47(Central Office)1123
Semiconductor devices; differential resistance (between two terminals), definition and letter symbol; identical with IEC 47(Central Office)1124
Semiconductor devices; revision of IEC 60747-1, chapters IV, V and VI, clauses on thermal characteristics and related temperatures; identical with IEC 47(Central Office)1126
Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987
€84.58
Semiconductor devices; measurement of coplanarity of the leads; identical with IEC 47(Central Office)1230
IEC-Q-quality assessment system for electronic components; capability approval procedure; identical with IEC 47(Central Office)1117
€56.17
Semiconductor devices; rules for the indication of the polarity of currents and voltages; identical with IEC 47/47A(Central Office)1127/214
€41.78
Semiconductor devices; amendment to IEC 60749: gross leak test; identical with IEC 47(Central Office)1169
Semiconductor devices; amendment to IEC 60749; external visual inspection; identical with IEC 47(Central Office)1170
Semiconductor devices; sealing test Q for semiconductor devices; identical with IEC 47(Central Office)1186
Semiconductor devices; amendment of testgroups B5, C5 and C7 of IEC 747-11; identical with IEC 47(Central Office)1187
Semiconductor devices; additional ratings and characteristics for power MOSFETs; identical with IEC 47(Central Office)1097
