EOS-Electrical Overstress in the Automotive Industry, Dealing with semiconductor devices showing a signature of electrial overstress, Contents, documentations and explanations 1st Edition, January 2020
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IEC 63378-6:2026 Thermal standardization on semiconductor packages - Part 6: Thermal resistance and capacitance model for transient temperature prediction at junction and measurement points
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Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation Hardness Testing of Electronics
€94.00
Standard Test Method for Calibration of Helium Leak Detectors by Use of Secondary Standards (Withdrawn 2008)
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Composants hyperfréquences - Caractéristiques dimensionnelles - Recueil de feuilles de boîtiers relatifs aux composants hyperfréquences
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Dispositifs hyperfréquences - Relais et commutateurs électromécaniques coaxiaux et en guides d'ondes - Recueil de spécifications particulières
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Dispositifs hyperfréquences - Lignes à retard actives - Éléments entrant dans la définition des procédés technologiques pour l'agrément de savoir-faire et recueil de spécifications particulières
Test Method for Measuring Small-Signal Comon Emitter Current Gain of Transistors at High Frequencies (Withdrawn 1995)
Test Method for Small-Signal Scattering Parameters of Low-Power Transistors in the 0.2 to 2.0 GHZ Frequency Range (Withdrawn 1997)
Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)
Semiconductor devices. Micro-electromechanical devices Test method for adhesion strength of metal powder paste in MEMS interconnection
€193.00
Semiconductor devices. Micro-electromechanical devices RF MEMS circulators and isolators
€316.00
Semiconductor devices. Micro-electromechanical devices Test methods of micro-electromechanical inertial shock switch threshold
€165.00
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test bias temperature instability
Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
