29.045 : Semiconducting materials

NF EN 62047-25, C96-050-25 (12/2016)

NF EN 62047-25, C96-050-25 (12/2016)

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Semiconductor devices - Micro-electromechanical devices - Part 25 : silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

€111.67

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NF EN 62047-26, C96-050-26 (06/2016)

NF EN 62047-26, C96-050-26 (06/2016)

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Semiconductor devices - Micro-electromechanical devices - Part 26 : description and measurement methods for micro trench and needle structures

€93.67

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NF EN 62047-9, C96-050-9 (04/2012)

NF EN 62047-9, C96-050-9 (04/2012)

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Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS - Dispositifs à semiconducteurs

€111.67

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DIN 50452-3:1995-10

DIN 50452-3:1995-10

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Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters

€41.78

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DIN 50452-1:1995-11

DIN 50452-1:1995-11

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Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles

€34.30

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DIN 50441-1:1996-07 (R2021)

DIN 50441-1:1996-07 (R2021)

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Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation

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DIN 50450-4:1993-09

DIN 50450-4:1993-09

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Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C-C-hydrocarbons in nitrogen by gas-chromatography

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DIN 50451-3:2012-11

DIN 50451-3:2012-11

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Aluminium (Al), Arsenic (As), Barium (Ba), Beryllium (Be), Bismuth (Bi), Calcium (Ca), Cadmium (Cd), Cobalt (Co), Chromium (Cr), Copper (Cu), Iron (Fe), Gallium (Ga), Germanium (Ge), Hafnium (Hf), Indium (In), Potassium (K), Lithium (Li), Magnesium (Mg), Manganese (Mn), Molybdenum (Mo), Nickel (Ni), Niobium (Nb), Lead (Pb), Antimony (Sb), Tin (Sn), Strontium (Sr), Tantalum (Ta), Titanium (Ti), Vanadium (V), Zinc (Zn), Zirconium (Zr) in nitric acid by ICP-MS

€77.20

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DIN 50451-6:2012-11

DIN 50451-6:2012-11

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NHF) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid

€63.27

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DIN 50451-4:2007-02

DIN 50451-4:2007-02

Superseded Historical

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

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DIN 50451-7:2017-09

DIN 50451-7:2017-09

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

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DIN 50451-7:2018-04

DIN 50451-7:2018-04

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Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

€63.27

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DIN SPEC 1994:2016-07

DIN SPEC 1994:2016-07

Superseded Historical

Testing of materials for semiconductor technology - Determination of anions in weak acids

€45.05

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DIN SPEC 1994:2017-02

DIN SPEC 1994:2017-02

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Testing of materials for semiconductor technology - Determination of anions in weak acids

€45.05

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DIN 50451-7:2017-02

DIN 50451-7:2017-02

Superseded Historical

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS

€63.27

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